CHIP DIODES
Characteristics      @ 25°C	Gold dia        Ø	Breakdown voltage             Vbr	Junction capacitance      Cj		Series resistance Rsf	Minority carrier lifetime τI	Reverse switching time             Tcr
Test conditions		Ir = 10 μA	Vr = 6V   F=1MHz		If = 10mA    F=120 MHz	If = 10mA Ir=6mA	If=20mA Vr=10V        50Ω
Case C2a	μm	V	pF		Ω	ns	ns
Type	typ.	min.	typ.	max	max	typ.	typ.
EH50033	25	30	0.08	0.12	1.8	20	2.0
EH50034	30		0.12	0.17	1.5	20	2.0
EH50035	35		0.17	0.23	1.0	25	2.5
EH50036	55		0.23	0.40	0.9	30	3.0
EH50037	65		0.40	0.60	0.7	40	4.0
EH50052	30	50	0.06	0.08	1.6	30	3.0
EH50053	35		0.08	0.12	1.4	30	3.0
EH50054	40		0.12	0.17	1.1	35	4.0
EH50055	50		0.17	0.23	1.0	40	4.0
EH50056	65		0.23	0.40	0.9	50	5.0
EH50057	80		0.40	0.60	0.7	60	6.0
EH50071	35	70	0.04	0.06	2.0	50	5.0
EH50072	40		0.06	0.08	1.7	50	5.0
EH50073	45		0.08	0.12	1.6	60	6.0
EH50074	50		0.12	0.17	1.4	60	6.0
EH50075	60		0.17	0.23	1.0	100	10.0
EH50076	80		0.23	0.40	0.9	100	10.0
EH50077	100		0.40	0.60	0.7	150	15.0
EH50101	45	100	0.04	0.06	1.9	150	15.0
EH50102	50		0.06	0.08	1.7	150	15.0
EH50103	60		0.08	0.12	1.4	200	20.0
EH50104	70		0.12	0.17	1.2	250	25.0
EH50105	90		0.17	0.23	1.0	300	30.0
EH50106	110		0.23	0.40	0.8	400	40.0
EH50107	130		0.40	0.60	0.6	500	50.0